BUZ73A |
RFQ for BUZ73A Required Field |
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| Technical/Catalog Information | BUZ73A |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 5.5A |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 530pF @ 25V |
| Power - Max | 40W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BUZ73A BUZ73A BUZ73AIN ND BUZ73AINND BUZ73AIN |
| Product | Manufacturers | Pack | D/C |
| BUZ73A | - | - | ORIGINAL |
Features |
| • N channel• Enhancement mode• Avalanche-rated |
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 37 |
ID | 5.5 | A |
| Pulsed drain current TC = 25 |
IDpuls | 22 | |
| Avalanche current,limited by Tjmax | IAR | 7 | |
| Avalanche energy,periodic limited by Tjmax |
EAR | 6.5 | mJ |
| Avalanche energy, single pulse ID =7A, VDD =50V, RGS = 25 L =3.67mH, Tj = 25 |
EAS | 120 | |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 |
Ptot | 40 | W |
| Operating temperature | Tj | -55 ... + 150 | |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 3.1 | K/W |
| Thermal resistance, chip to ambient | RthJC | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
| Models | MFG | Pack |
| BUZ10 | TO-220 | |
| BUZ100 | 2004+ | |
| BUZ100A | ||
| BUZ100L | TO-263 | |
| BUZ100S | TO-220 | |
| BUZ100S-4 | SOP28 | |
| BUZ100SL | 2004+ | |
| BUZ100SL-4 | SOP28 | |
| BUZ101 | TO-220 | |
| BUZ101L | TO-220 | |
| BUZ101S | ||
| BUZ101SL | 2004+ | |
| BUZ101SL-4 | SOP28 | |
| BUZ102 | SOP | |
| BUZ102AL | TO-220 | |
| BUZ102E3249 | ||
| BUZ102S | TO-220 | |
| BUZ102S-4 | SOP28 | |
| BUZ102SL | TO-263 | |
| BUZ103 | 2004+ |
